4.8 Article

Superconducting Dome in a Gate-Tuned Band Insulator

Journal

SCIENCE
Volume 338, Issue 6111, Pages 1193-1196

Publisher

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1228006

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Funding

  1. Japan and Strategic International Collaborative Research Program (SICORP), Japan Science and Technology Agency [21224009]
  2. Japan Society for the Promotion of Science through Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)
  3. Grants-in-Aid for Scientific Research [21224009] Funding Source: KAKEN

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A dome-shaped superconducting region appears in the phase diagrams of many unconventional superconductors. In doped band insulators, however, reaching optimal superconductivity by the fine-tuning of carriers has seldom been seen. We report the observation of a superconducting dome in the temperature-carrier density phase diagram of MoS2, an archetypal band insulator. By quasi-continuous electrostatic carrier doping achieved through a combination of liquid and solid gating, we revealed a large enhancement in the transition temperature T-c occurring at optimal doping in the chemically inaccessible low-carrier density regime. This observation indicates that the superconducting dome may arise even in doped band insulators.

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