Journal
SCIENCE
Volume 332, Issue 6035, Pages 1294-1297Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1204428
Keywords
-
Categories
Funding
- Defense Advanced Research Projects Agency (DARPA) [FA8650-08-C-7838]
Ask authors/readers for more resources
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available