4.8 Article

Metallic and Insulating Oxide Interfaces Controlled by Electronic Correlations

Journal

SCIENCE
Volume 331, Issue 6019, Pages 886-889

Publisher

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1198781

Keywords

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Funding

  1. National Science Foundation [DMR-0906443, EPS-1010674]
  2. David and Lucile Packard Fellowship
  3. Materials Research Science and Engineering Center (NSF) [DMR-0820521]
  4. Nanoelectronics Research Initiative of the Semiconductor Research Corporation
  5. Nebraska Research Initiative
  6. U.S. Department of Energy (DOE) [DE-FG02-07ER46416]
  7. National Center for Electron Microscopy at Lawrence Berkeley National Laboratory for their support under DOE [DE-AC02-05CH11231]
  8. DOE Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]
  9. Center for Functional Nanomaterials [DE-AC02-98CH10886]
  10. DOE/BES/MSE
  11. Direct For Mathematical & Physical Scien
  12. Division Of Materials Research [0906443] Funding Source: National Science Foundation

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The formation of two-dimensional electron gases (2DEGs) at complex oxide interfaces is directly influenced by the oxide electronic properties. We investigated how local electron correlations control the 2DEG by inserting a single atomic layer of a rare-earth oxide (RO) [(R is lanthanum (La), praseodymium (Pr), neodymium (Nd), samarium (Sm), or yttrium (Y)] into an epitaxial strontium titanate oxide (SrTiO3) matrix using pulsed-laser deposition with atomic layer control. We find that structures with La, Pr, and Nd ions result in conducting 2DEGs at the inserted layer, whereas the structures with Sm or Y ions are insulating. Our local spectroscopic and theoretical results indicate that the interfacial conductivity is dependent on electronic correlations that decay spatially into the SrTiO3 matrix. Such correlation effects can lead to new functionalities in designed heterostructures.

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