Journal
SCIENCE
Volume 332, Issue 6033, Pages 1065-1067Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1202152
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Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan [21019004]
- Funding Program for Next Generation World-Leading Researchers [GR029]
- Grants-in-Aid for Scientific Research [19053003, 21224009, 21686002, 21019004, 23656011, 22103004, 19053001] Funding Source: KAKEN
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The electric field effect in ferromagnetic semiconductors enables switching of the magnetization, which is a key technology for spintronic applications. We demonstrated electric field-induced ferromagnetism at room temperature in a magnetic oxide semiconductor, (Ti,Co)O(2), by means of electric double-layer gating with high-density electron accumulation (>10(14) per square centimeter). By applying a gate voltage of a few volts, a low-carrier paramagnetic state was transformed into a high-carrier ferromagnetic state, thereby revealing the considerable role of electron carriers in high-temperature ferromagnetism and demonstrating a route to room-temperature semiconductor spintronics.
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