Journal
SCIENCE
Volume 332, Issue 6031, Pages 825-828Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1204168
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Funding
- National Science Foundation through the Nanoscale Science and Engineering Center
- Deutsche Forschungsgemeinschaft [TRR 80]
- European Commission
- Nanoscale Research Initiative
- MIT
- [ARO-54173PH]
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Increases in the gate capacitance of field-effect transistor structures allow the production of lower-power devices that are compatible with higher clock rates, driving the race for developing high-k dielectrics. However, many-body effects in an electronic system can also enhance capacitance. Onto the electron system that forms at the LaAlO3/SrTiO3 interface, we fabricated top-gate electrodes that can fully deplete the interface of all mobile electrons. Near depletion, we found a greater than 40% enhancement of the gate capacitance. Using an electric-field penetration measurement method, we show that this capacitance originates from a negative compressibility of the interface electron system. Capacitance enhancement exists at room temperature and arises at low electron densities, in which disorder is strong and the in-plane conductance is much smaller than the quantum conductance.
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