4.8 Article

Nanoscale Tunable Reduction of Graphene Oxide for Graphene Electronics

Journal

SCIENCE
Volume 328, Issue 5984, Pages 1373-1376

Publisher

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1188119

Keywords

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Funding

  1. National Science Foundation [DMR 0120967, DMR 0820382, DMR-0706031]
  2. U.S. Department of Energy [DE-FG02-06ER46293]
  3. Institute for Nanoscience at Naval Research Laboratory (NRL)
  4. Office of Naval Research of the United States
  5. Defense Advanced Research Projects Agency (DARPA)
  6. Georgia Institute of Technology (Georgia Tech Research Foundation)
  7. National Research Council Research Associateship Award at Naval Research Laboratory of the United States
  8. CAFM
  9. U.S. Department of Energy (DOE) [DE-FG02-06ER46293] Funding Source: U.S. Department of Energy (DOE)
  10. Directorate For Engineering
  11. Div Of Civil, Mechanical, & Manufact Inn [1100290] Funding Source: National Science Foundation

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The reduced form of graphene oxide (GO) is an attractive alternative to graphene for producing large-scale flexible conductors and for creating devices that require an electronic gap. We report on a means to tune the topographical and electrical properties of reduced GO (rGO) with nanoscopic resolution by local thermal reduction of GO with a heated atomic force microscope tip. The rGO regions are up to four orders of magnitude more conductive than pristine GO. No sign of tip wear or sample tearing was observed. Variably conductive nanoribbons with dimensions down to 12 nanometers could be produced in oxidized epitaxial graphene films in a single step that is clean, rapid, and reliable.

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