4.6 Article

A first principles study of H2S adsorption and decomposition on a Ge(100) surface

Journal

RSC ADVANCES
Volume 5, Issue 5, Pages 3825-3832

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c4ra08887e

Keywords

-

Funding

  1. Ministry of Science and Technology, Taiwan [MOST 101-2113-M-011-004-MY3]
  2. National Center of High-Performance Computing, Institute of Nuclear Energy Research
  3. Atomic Energy Council in Taiwan

Ask authors/readers for more resources

We employed density functional theory (DFT) calculations to examine the adsorption configurations and possible reaction paths for H2S on a Ge(100) surface. There are four reaction paths proposed for the decomposition of adsorbed H2S on a Ge(100) surface and the corresponding structural conformations are studied extensively. The present study shows two new possible products and a detailed reaction mechanism for H2S adsorption on a Ge(100) surface and the results are compared with our previous study of H2S adsorption on a Si(100) surface (J. Phy. Chem. C, 115, 2011, 19203). The density of states (DOS) and electron density difference (EDD) analyses are used to illustrate the interaction between S-containing species and surface Ge atoms.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available