4.8 Article

Polarization Control of Electron Tunneling into Ferroelectric Surfaces

Journal

SCIENCE
Volume 324, Issue 5933, Pages 1421-1425

Publisher

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1171200

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Funding

  1. Semiconductor Research Corporation Nanoelectronics Research Initiative Western Institute of Nanoelectrics program
  2. Office of Science, Office of Basic Energy Sciences, Materials Sciences Division of the US Department of Energy [DE-AC02-05CH1123]

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We demonstrate a highly reproducible control of local electron transport through a ferroelectric oxide via its spontaneous polarization. Electrons are injected from the tip of an atomic force microscope into a thin film of lead-zirconate titanate, Pb(Zr0.2Ti0.8)O-3, in the regime of electron tunneling assisted by a high electric field (Fowler-Nordheim tunneling). The tunneling current exhibits a pronounced hysteresis with abrupt switching events that coincide, within experimental resolution, with the local switching of ferroelectric polarization. The large spontaneous polarization of the PZT film results in up to 500-fold amplification of the tunneling current upon ferroelectric switching. The magnitude of the effect is subject to electrostatic control via ferroelectric switching, suggesting possible applications in ultrahigh-density data storage and spintronics.

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