Journal
SCIENCE
Volume 325, Issue 5947, Pages 1515-1518Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1173667
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Funding
- Korea Institute of Science and Technology Institutional Program
- National Research Council of Science & Technology (NST), Republic of Korea [2E20990] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Spintronics increases the functionality of information processing while seeking to overcome some of the limitations of conventional electronics. The spin-injected field effect transistor, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. We demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure with empirically calibrated electrical injection and detection of ballistic spin-polarized electrons. We observed and fit to theory an oscillatory channel conductance as a function of monotonically increasing gate voltage.
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