Horizontal growth of MoS2 nanowires by chemical vapour deposition

We describe a single step route for the synthesis of MoS2 wires using a chemical vapour deposition (CVD) method. By tuning the CVD growth parameters, the horizontally oriented MoS2 nanowires on SiO2/Si substrate can be synthesized successfully. The MoS2 nanowire has height of about 93 nm and width of about 402 nm with multilayer structure. Good local photoluminescence (PL) properties can be observed for these horizontal MoS2 nanowires. The successful fabrication and prominent PL effect of the horizontal MoS2 nanowires provide potential applications for the MoS2-based in planar devices.