Journal
RSC ADVANCES
Volume 5, Issue 13, Pages 9621-9626Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4ra14222e
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Funding
- Natural Science Foundation of China [51302165, 61274082, 61077013]
- Shanghai Municipal Education Commission [ZZSD13047]
- China Postdoctoral Science Special Fund [2012T50387]
- shanghai University
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We have fabricated novel BaZnSnO-TFT using a solution process and investigated the electrical performance and temperature stability. BaZnSnO-TFT shows an improved field-effect mobility of 3.2 cm(2) V-1 s(-1), a subthreshold swing of 0.61 V per decade and an on/off current ratio of 2 x 10(7) compared to those of ZnSnO-TFT. Density of state distribution of BaZnSnO and ZnSnO semiconductor has been extracted from electrical measurements. BaZnSnO-TFT shows an improved electrical performance and temperature stability due to smaller oxygen vacancies, less bulk trap density and interface state density.
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