Journal
RUSSIAN PHYSICS JOURNAL
Volume 55, Issue 8, Pages 903-909Publisher
SPRINGER
DOI: 10.1007/s11182-013-9899-5
Keywords
gallium nitride; ferromagnetic properties; impurities of transition metals and rare earth elements
Categories
Funding
- Ministry of Education and Science [13.G25.31.0042]
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The literature on the magnetic properties of GaN doped with magnetic impurities: the transition metals (Mn, Cr, Fe, Ni, and V) and rare earth elements (Gd, Eu, and Sm), as well as gallium nitride containing high concentration of gallium vacancies and quantum dots is reviewed. The properties of GaN doped by ion implantation and during the MBE and MOVPE growth of layers are considered. The undoped GaN and GaN films doped with the transition metals and rare earth elements often retain ferromagnetic properties at room temperature.
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