Journal
NANOSCIENCE AND NANOTECHNOLOGY LETTERS
Volume 7, Issue 8, Pages 643-647Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/nnl.2015.1976
Keywords
Ag-Doped ZnO; p Type Doping; Core-Shell Nanowires; Atom Layer Deposition
Funding
- National Natural Science Foundation of China [61076039, 61204065, 61205193, 61307045, 21103159]
- National Key Lab of High Power Semiconductor Lasers Foundation [9140C310101120C031115]
- Research Fund for the Doctoral Program of Higher Education of China [21022216110002, 20102216110001, 20112216120005]
- Developing Project of Science and Technology of Jilin Province [20121816, 201201116]
- Foundation of Department of Education of Jilin Province [2011JYT05, 2011JYT10, 2011JYT11]
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In this work, the ZnO/Ag-doped ZnO core shell nanowires were obtained through a facile threestep method, including the hydrothermal process for ZnO nanowires growth, DC sputtering for silver particles deposition on ZnO nanowires and atom layer deposition for ZnO shell layer deposition. The p-type ZnO shell layer was achieved by annealing treatment under oxygen-rich condition. Compared with ZnO and ZnO/Ag/ZnO samples, (002) diffraction peak position of ZnO/Ag-doped ZnO core shell nanowires shifted to small angle side, which indicated that Ag diffused into ZnO lattice as shell layer. Meanwhile, low-temperature photoluminescence (PL) was used to investigate the p-type emission behavior, which can be observed by exciton bound to a neutral acceptor (A X) at 3.354 eV and the recombination of free electron to the acceptor transition (FA) at 3.315 eV in such the Ag-doped ZnO shell layer. In addition, the calculated acceptor binding energy was 124 meV.
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