Journal
REVIEW OF SCIENTIFIC INSTRUMENTS
Volume 82, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3518974
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- Nanophysics and nanoelectronics program of Ukraine [NANO 2/08]
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We have presented theory and experimentally demonstrated an efficient method for drastically reducing the power consumption of the rf/microwave amplifiers based on HEMT in unsaturated dc regime. Conceptual one-stage 10 dB-gain amplifier showed submicrowatt level of the power consumption (0.95 mu W at frequency of 0.5 GHz) when cooled down to 300 mK. Proposed technique has a great potential to design the readout amplifiers for ultra-deep-cooled cryoelectronic quantum devices. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3518974]
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