Determination of energy band gap of nanocrystalline SbSI using diffuse reflectance spectroscopy

Twelve methods of determining energy band gap (E-g) of semiconductors using diffuse reflectance spectroscopy have been applied in investigations of sonochemically produced antimony sulfoiodide (SbSI) consisting of nanowires. It has been proved that the best method of determining E-g is based on simultaneous fitting of many mechanisms of absorption to the spectral dependence of Kubelka-Munk function evaluated from the diffuse reflectance data. It allows determining the values of indirect forbidden E-g, the Urbach energy, and the constant absorption/scattering of the examined semiconductor.