Journal
REVIEW OF SCIENTIFIC INSTRUMENTS
Volume 80, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3160105
Keywords
aluminium compounds; elemental semiconductors; gallium arsenide; Hall effect devices; III-V semiconductors; magnetic field measurement; magnetic sensors; semiconductor device noise; silicon
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Funding
- Belgian Interuniversity Attraction Poles IAP
- Research Fund K. U. Leuven [GOA/2004/02]
- Flemish FWO
- ESF
- Institiuut voor de Aanmoediging van Innovatie door Wetenschap en Technologie in Vlaanderen (IWT-Vlaanderen)
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In this paper the magnetic field detection limits of microscopic Hall sensors are investigated as a function of their lateral size. Hall sensors fabricated from GaAs/AlGaAs heterostructures and silicon are experimentally investigated at different temperatures using Hall effect and noise spectrum measurements. At room temperature a clear size dependence of the detection limit is observed, whereas at low temperatures this dependence is found to disappear. The results are explained using the theory of noise in semiconductors.
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