4.0 Article

Correlation between Reverse Voltage Characteristics and Bypass Diode Operation with Different Shading Conditions for c-Si Photovoltaic Module Package

Journal

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
Volume 15, Issue 5, Pages 577-584

Publisher

IEEK PUBLICATION CENTER
DOI: 10.5573/JSTS.2015.15.5.577

Keywords

Solar cell; PV module package; bypass diode; hot spot

Funding

  1. New & Renewable Energy Core Technology Program of the Korea institute of Energy Technology Evaluation and planning (KETEP) from the Ministry of Trade, Industry &Energy, Republic of Korea [20153010012060]
  2. Korea Evaluation Institute of Industrial Technology (KEIT) [20153010012060] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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A photovoltaic (PV) system generates electricity by installing a solar energy array; therefore, the photovoltaic system can be easily exposed to external factors, which include environmental factors such as temperature, humidity, and radiation. These factors-as well as shading, in particular-lead to power degradation. When there is an output loss in the solar cell of a PV module package, the output loss is partly controlled by the bypass diode. As solar cells become highly efficient, the characteristics of series resistance and parallel resistance improve, and the characteristics of reverse voltage change. A bypass diode is connected in parallel to the string that is connected in series to the PV module. Ideally, the bypass diode operates when the voltage is -0.6[V] around. This study examines the bypass diode operating time for different types of crystalline solar cells. It compares the reverse voltage characteristics between the single solar cell and polycrystalline solar cell. Special modules were produced for the experiment. The shading rate of the solar cell in the specially made solar energy module was raised by 5% each time to confirm that the bypass diode was operating. The operation of the bypass diode is affected not only by the reverse voltage but also by the forward bias. This tendency was verified as the number of strings increased.

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