Related references
Note: Only part of the references are listed.Improvement of resistive switching in NiO-based nanowires by inserting Pt layers
Yen-Chun Huang et al.
APPLIED PHYSICS LETTERS (2012)
Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature
Tung-Ming Pan et al.
APPLIED PHYSICS LETTERS (2011)
Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
Qi Liu et al.
ACS NANO (2010)
Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory
Myoung-Jae Lee et al.
ADVANCED FUNCTIONAL MATERIALS (2009)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals
Wen-Yuan Chang et al.
APPLIED PHYSICS LETTERS (2009)
Resistive switching memory effect of ZrO2 films with Zr+ implanted
Qi Liu et al.
APPLIED PHYSICS LETTERS (2008)
Overview of candidate device technologies for storage-class memory
G. W. Burr et al.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2008)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with Dy2O3 gate dielectric
Sheng-Chih Chang et al.
APPLIED PHYSICS LETTERS (2006)
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
K Szot et al.
NATURE MATERIALS (2006)
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715
BJ Choi et al.
JOURNAL OF APPLIED PHYSICS (2005)
Identification of a determining parameter for resistive switching of TiO2 thin films -: art. no. 262907
C Rohde et al.
APPLIED PHYSICS LETTERS (2005)
Reproducible switching effect in thin oxide films for memory applications
A Beck et al.
APPLIED PHYSICS LETTERS (2000)
Electric-pulse-induced reversible resistance change effect in magnetoresistive films
SQ Liu et al.
APPLIED PHYSICS LETTERS (2000)
Share Paper
