Journal
RARE METALS
Volume 33, Issue 1, Pages 75-79Publisher
NONFERROUS METALS SOC CHINA
DOI: 10.1007/s12598-013-0159-1
Keywords
Dy2O3; Unipolar resistive switching; Pt nanocrystal layer; Pulsed laser deposition
Funding
- National Natural Science Foundation of China [50932001, 51102020, 51202013]
- Important National Science & Technology Specific Projects [2009ZX02039-005]
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Resistive switching (RS) behaviors of Dy2O3-based memory devices with and without Pt nanocrystals (Pt-nc) layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage (< 1.2 V), high resistance ratio (> 1 x 10(4)), a large number of switching cycles, as well as long retention time (> 1 x 10(5) s), owing to the local electric field confined and strengthened near the nanocrystals' location.
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