4.4 Article

Molecular depth profiling of multilayer structures of organic semiconductor materials by secondary ion mass spectrometry with large argon cluster ion beams

Journal

RAPID COMMUNICATIONS IN MASS SPECTROMETRY
Volume 23, Issue 20, Pages 3264-3268

Publisher

WILEY
DOI: 10.1002/rcm.4250

Keywords

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Funding

  1. Core Research of Evolutional Science and Technology (CREST)
  2. Japan Science and Technology Agency (JST)

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in this study, we present molecular depth profiling of multilayer structures composed of organic semiconductor materials such as tris(8-hydroxyquinoline)aluminum (Alq(3)) and 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPD). Molecular ions produced from Alq(3) and NPD were measured by linear-type time-of-flight (TOF) mass spectrometry under 5.5 keV Ar-700 ion bombardment. The organic multilayer films were analyzed and etched with large Ar cluster ion beams, and the interfaces between the organic layers were clearly distinguished. The effect of temperature on the diffusion of these materials was also investigated by the depth profiling analysis with Ar cluster ion beams. The thermal diffusion behavior was found to depend on the specific materials, and the diffusion of Alq(3) molecules was observed to start at a lower temperature than that of NPD molecules. These results prove the great potential of large gas cluster ion beams for molecular depth profiling of organic multilayer samples. Copyright (C) 2009 John Wiley & Sons, Ltd.

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