Journal
QUANTUM ELECTRONICS
Volume 43, Issue 5, Pages 423-427Publisher
TURPION LTD
DOI: 10.1070/QE2013v043n05ABEH015170
Keywords
Bessel beams; quasi-Gaussian beams; axicon; beam propagation parameter; semiconductor laser
Funding
- Russian Ministry of Education and Science of the Russian Federation [8398]
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We study the peculiarities of the formation of Bessel beams in semiconductor lasers with a high propagation parameter M-2. It is shown that the propagation distance of the Bessel beam is determined by the divergence of the quasi-Gaussian beam with high M-2 rather than the geometric parameters of the optical scheme. It is demonstrated that technologically inevitable rounding of the axicon tip leads to a significant increase in the transverse dimension of the central part of the Bessel beam near the axicon.
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