4.3 Article Proceedings Paper

Thienothiophene-benzotriazole-based semicrystalline linear copolymers for organic field effect transistors

Journal

PURE AND APPLIED CHEMISTRY
Volume 86, Issue 8, Pages 1293-1302

Publisher

WALTER DE GRUYTER GMBH
DOI: 10.1515/pac-2014-0205

Keywords

ICFPAM-2013; optoelectronics; organic field-effect transistors; semiconductors; X-ray diffraction

Funding

  1. National Research Foundation (NRF) [2012R1A1A2005855, NRF-2009-0079630]
  2. Korea Foundation for the Advancement of Science & Creativity (KOFAC)
  3. Korean Government (MOE)
  4. New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Ministry of Trade, Industry & Energy, Republic of Korea [20133030011330]
  5. Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science and Technology, Korea [2011-0031639]

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A series of thienothiophene-benzotriazole-based semicrystalline copolymers, PTTBTz, PTTBTz-F, and PTTBTz-OR, were synthesized by considering chain linearity, planarity and inter-chain packing by virtue of non-covalent attractive interaction. Fluorine and alkoxy substituents were introduced to modulate the intra- and inter-chain coulombic interactions and crystalline ordering. The fluorine and alkoxy-substituted PTTBTz-F and PTTBTz-OR showed pronounced inter-chain packing with edge-on orientation confirmed by UV-vis absorption and X-ray diffraction measurements. The well-resolved diffraction patterns were obtained for PTTBTz-F and PTTBTz-OR, showing (100)similar to(500) inter-lamellar scattering peaks (d-spacing, 17 similar to 18 angstrom) in the out-of-plane direction and a pi-pi stacking peak (d-spacing, 3.5 similar to 4.1 angstrom) in the in-plane direction. Organic field effect transistor (OFET) devices were fabricated with a bottom gate and top contact geometry. PTTBTz-F (mu(h) = 4.49 x 10(-2) cm(2) V-1 s(-1), on/off ratio = 1.13 x 107) and PTTBTz-OR (mu(h) = 8.39 x 10(-3) cm(2) V-1 s(-1), on/off ratio = 2.98 x 104) showed nearly 3 and 2 orders of magnitude higher hole mobility upon annealing at 305 and 260 degrees C, with compared to the unsubstituted PTTBTz.

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