Journal
ADVANCED ENERGY MATERIALS
Volume 6, Issue 3, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.201501609
Keywords
solar cells; fill factors; nonohmic back contact; secondary phases formation; series resistance
Categories
Funding
- Clean Energy Program Office, National Research Foundation (NRF) of Singapore
- ERI@N
- U.S. Department of Energy, Energy Efficiency and Renewable Energy Program [DE-EE0006334]
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Besides the open circuit voltage (V-OC) deficit, fill factor (FF) is the second most significant parameter deficit for earth-abundant kesterite solar cell technology. Here, various pathways for FF loss are discussed, with focus on the series resistance issue and its various contributing factors. Electrical and physical characterizations of the full range of bandgap (E-g = 1.0-1.5 eV) Cu2ZnSn(SxSe1-x)(4) (CZTSSe) devices, as well as bare and exfoliated films with various S/(S + Se) ratios, are performed. High intensity Suns-V-OC measurement indicates a nonohmic junction developing in high bandgap CZTSSe. Grazing incidence X-ray diffraction, Raman mapping, field emission scanning electron microscopy, and X-ray photoelectron spectroscopy indicate the formation of Sn(S,Se)(2), Mo(S,Se)(2), and Zn(S,Se) at the high bandgap CZTSSe/Mo interface, contributing to the increased series resistance (R-S) and nonohmic back contact characteristics. This study offers some clues as to why the record-CZTSSe solar cells occur within a bandgap range centered around 1.15 eV and offers some direction for further optimization.
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