Journal
PROGRESS IN PHOTOVOLTAICS
Volume 23, Issue 7, Pages 901-908Publisher
WILEY-BLACKWELL
DOI: 10.1002/pip.2504
Keywords
SnS thin-film solar cell; zinc oxysulfide; buffer layer; atomic layer deposition; pulsed-chemical vapor deposition
Funding
- U.S. Department of Energy [DE-EE0005329]
- Intel PhD Fellowship
- DOE EERE Postdoctoral Research Award
- NSF [ECS-0335765]
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Thin-film solar cells consisting of earth-abundant and non-toxic materials were made from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were studied for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post-deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved. Copyright (c) 2014 John Wiley & Sons, Ltd.
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