Journal
PROGRESS IN PHOTOVOLTAICS
Volume 23, Issue 7, Pages 874-882Publisher
WILEY
DOI: 10.1002/pip.2501
Keywords
perimeter; recombination; CPV; concentration; multijunction; solar cells; photovoltaics
Funding
- European Commission under the project NGCPV 'A new generation of concentrator photovoltaic solar cells, modules and systems' [283798]
- Spanish Ministerio de Economia y Competitividad [TEC2011-28639-C02-01, TEC2012-3728, IPT-2011-1441-920000]
- Comunidad de Madrid under the NUMANCIA II program [S2009/ENE1477]
- European Commission
- Fundacion Madri+d within the ERA-NET MATERA+ (FP7) through the project NANOCDTESOLAR
Ask authors/readers for more resources
This paper studies the recombination at the perimeter in the subcells that constitute a GaInP/GaAs/Ge lattice-matched triple-junction solar cell. For that, diodes of different sizes and consequently different perimeter/area ratios have been manufactured in single-junction solar cells resembling the subcells in a triple-junction solar cell. It has been found that neither in GaInP nor in Ge solar cells the recombination at the perimeter is significant in devices as small as 500mx500m(2.510(-3)cm(2)) in GaInP and 250mx250m(6.2510(-4)cm(2)) in Ge. However, in GaAs, the recombination at the perimeter is not negligible at low voltages even in devices as large as 1cm(2), and it is the main limiting recombination factor in the open circuit voltage even at high concentrations in solar cells of 250mx250m(6.2510(-4)cm(2)) or smaller. Therefore, the recombination at the perimeter in GaAs should be taken into account when optimizing triple-junction solar cells. Copyright (c) 2014 John Wiley & Sons, Ltd.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available