Journal
PROGRESS IN PHOTOVOLTAICS
Volume 22, Issue 1, Pages 122-128Publisher
WILEY
DOI: 10.1002/pip.2354
Keywords
high band-gap; CIGS; CuInxGa1-xS2; solution process; solar cells
Funding
- Korea Institute of Science and Technology (KIST)
- Converging Research Center Program through a National Research Foundation of Korea [2012-K001271]
- University-Institute cooperation program
- Ministry of Education, Science and Technology
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A high band-gap (similar to 1.55eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution-based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS2 crystallites. Because of the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (similar to 787mV) with a power conversion efficiency of 8.28% under standard irradiation conditions. Copyright (c) 2013 John Wiley & Sons, Ltd.
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