Journal
PROGRESS IN PHOTOVOLTAICS
Volume 22, Issue 2, Pages 161-165Publisher
WILEY
DOI: 10.1002/pip.2445
Keywords
Cu(In; Ga)Se-2; Zn(O; S); thin film; hetero junction; buffer; sputtering
Funding
- German Federal Ministry of Education and Research (NeuMaS) [13N11768]
- German Federal Ministry for the Environment, Nature Conservation and Nuclear Safety (comCIGS II) [0325448D]
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In an effort to reduce the complexity and associated production costs of Cu(In,Ga)Se-2 (CIGSe)-based solar cells, the commonly used sputtered undoped ZnO layer has been modified to eliminate the requirement for a dedicated buffer layer. After replacing the ZnO target with a mixed ZnO/ZnS target, efficient solar cells could be prepared by sputtering directly onto the as-grown CIGSe surface. This approach has now been tested with high-quality lab-scale glass/Mo/CIGSe substrates. An efficiency of 18.3% has been independently confirmed without any post-deposition annealing or light soaking. Copyright (c) 2013 John Wiley & Sons, Ltd.
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