Journal
PROGRESS IN PHOTOVOLTAICS
Volume 22, Issue 8, Pages 870-884Publisher
WILEY
DOI: 10.1002/pip.2325
Keywords
p-i-n solar cell; drift-diffusion model; analytical J(V) curve; ideality factor; surface recombination; interface recombination; nanocrystalline silicon; microcrystalline silicon; interface potential drop; band offset
Funding
- CONICET
- Comahue National University (Argentina)
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Analytical modeling of p-i-n solar cells constitutes a practical tool to extract material and device parameters from fits to experimental data, and to establish optimization criteria. This paper proposes a model for p-i-n solar cells based on a new approximation, which estimates the electric field taking into account interface potential drops at the intrinsic-to-doped interfaces. This leads to a closed-form current/voltage equation that shows very good agreement with device simulations, revealing that the inclusion of the interface potential drops constitutes a major correction to the classical uniform-field approach. Furthermore, the model is able to fit experimental current/voltage curves of efficient nanocrystalline Si and microcrystalline Si p-i-n solar cells under illumination and in the dark, obtaining material parameters such as mobility-life-time product, built-in voltage, or surface recombination velocity. Copyright (C) 2012 John Wiley & Sons, Ltd.
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