Journal
PROGRESS IN PHOTOVOLTAICS
Volume 20, Issue 4, Pages 463-471Publisher
WILEY
DOI: 10.1002/pip.1209
Keywords
photovoltaic; silicon; LIBS; boron; cartography; quantification
Funding
- French National Research Agency (ANR) [ANR-07-PSPV-0]
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The principal subject matter of this work is the application of laser-induced breakdown spectroscopy for the multi-elemental analytical characterization of different qualities of solid silicon. The physical process upon which the technique is based is the temporally resolved observation of emission spectra emitted by a micro-plasma generated by a laser focused on the surface of a given sample. The optimal environmental parameters such as the composition of the buffering gas for the identification and measurement of several metallic, non-metallic, and dopant impurities were determined. Particular attention was given to boron. A detection limit of 2.10-4 mg/g of boron was found using a calibration curve, which was made in the range of 1 to 100 ppmw. Silicon samples from different production techniques (4C and directional solidification), which permit the segregation of different impurities along the length of the silicon ingot were analyzed using laser-induced breakdown spectroscopy. Copyright (c) 2011 John Wiley & Sons, Ltd.
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