Journal
PROGRESS IN PHOTOVOLTAICS
Volume 19, Issue 4, Pages 478-481Publisher
WILEY-BLACKWELL
DOI: 10.1002/pip.1039
Keywords
Zn-Sn-O; Cu(In,Ga)Se-2; buffer layer; atomic layer deposition
Funding
- Swedish Energy Agency
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Thin Zn-Sn-O films are evaluated as new buffer layer material for Cu(In,Ga)Se-2-based solar cell devices. A maximum conversion efficiency of 13.8% (V-oc = 691 mV, J(sc)(QE) = 27.9 mA/cm(2), and FF = 71.6%) is reached for a solar cell using the Zn-Sn-O buffer layer which is comparable to the efficiency of 13.5% (V-oc - 706 mV, J(sc)(QE) - 26.3 mA/cm(2), and FF = 72.9%) for a cell using the standard reference CdS buffer layer. The open circuit voltage (V-oc) and the fill factor (FF) are found to increase with increasing tin content until an optimum in both parameters is reached for Sn/(Zn+Sn) values around 0.3-0.4. Copyright (C) 2010 John Wiley & Sons, Ltd.
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