4.7 Article

Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)2 based thin film photovoltaics: present status and current developments

Journal

PROGRESS IN PHOTOVOLTAICS
Volume 18, Issue 6, Pages 411-433

Publisher

WILEY
DOI: 10.1002/pip.955

Keywords

Cd-free buffer layers; window layers; transparent conducting oxides; chalcopyrite-based solar cells; Cu(In,Ga)(S,Se)(2)

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The aim of the present contribution is to give a review on the recent work concerning Cd-free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite-type absorbers such as Cu(In,Ga)Se-2, CuInS2, or Cu(In,Ga)(S,Se)(2). The corresponding solar-cell performances, the expected technological problems, and current attempts for their commercialization will be discussed. The most important deposition techniques developed in this paper are chemical bath deposition, atomic layer deposition, ILGAR deposition, evaporation, and spray deposition. These deposition methods were employed essentially for buffers based on the following three materials: In2S3, ZnS, Zn1-xMgxO. Copyright (C) 2010 John Wiley & Sons, Ltd.

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