Journal
NATURE COMMUNICATIONS
Volume 6, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/ncomms7136
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Funding
- Army Research Office [W911NF-14-1-0104]
- National Science Foundation
- Nanoelectronics Research Initiative [DMR-1124696]
- Office of Naval Research [N00014-14-1-0761]
- Department of Energy Office of Basic Energy Sciences [DE-FG02-07ER15920]
- National Energy Research Scientific Computing Center
- Office of Science of the US Department of Energy [DE-AC02- 05CH11231]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1124696] Funding Source: National Science Foundation
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The next technological leap forward will be enabled by new materials and inventive means of manipulating them. Among the array of candidate materials, graphene has garnered much attention; however, due to the absence of a semiconducting gap, the realization of graphene-based devices often requires complex processing and design. Spatially controlled local potentials, for example, achieved through lithographically defined split-gate configurations, present a possible route to take advantage of this exciting two-dimensional material. Here we demonstrate carrier density modulation in graphene through coupling to an adjacent ferroelectric polarization to create spatially defined potential steps at 180 degrees-domain walls rather than fabrication of local gate electrodes. Periodic arrays of p-i junctions are demonstrated in air (gate tunable to p-n junctions) and density functional theory reveals that the origin of the potential steps is a complex interplay between polarization, chemistry, and defect structures in the graphene/ferroelectric couple.
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