Journal
ACTA MATERIALIA
Volume 98, Issue -, Pages 327-335Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2015.07.047
Keywords
Ultrafast laser; Annealing; Al:ZnO; Electrical properties; Laser-induced defects
Funding
- ADEM, A green Deal in Energy Materials of the Ministry of Economic Affairs of The Netherlands
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Industrial-grade Al:ZnO thin films, were annealed by UV picosecond laser irradiation in argon atmosphere. A remarkable increase of both the carrier density and electron mobility was measured, while the optical properties in the 400-1000 nm range did not change significantly. We studied the microstructure of the films, in order to explain the observed macroscopical changes upon ultra-short pulsed laser annealing. The effects of the ps-laser irradiation are shown to be attributed to the formation of defects and a local atomic rearrangement on the sub-nm scale. This interpretation is rigorously based on the cross-referenced analysis of different experimental techniques (i.e. SEM, AFM, positron annihilation, optical spectroscopy, Hall measurements, Raman spectroscopy, XPS and XRD). The results of this study can be used to develop a new, viable, technological processing technique to further improve Al:ZnO electrodes. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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