Journal
NATURE COMMUNICATIONS
Volume 6, Issue -, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/ncomms8993
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Funding
- Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, of the U.S. Department of Energy [DE-AC02-05CH11231]
- NSF CAREER Award [DMR-1055938]
- Direct For Mathematical & Physical Scien [1055938] Funding Source: National Science Foundation
- Division Of Materials Research [1055938] Funding Source: National Science Foundation
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Two-dimensional monolayer transition metal dichalcogenide semiconductors are ideal building blocks for atomically thin, flexible optoelectronic and catalytic devices. Although challenging for two-dimensional systems, sub-diffraction optical microscopy provides a nanoscale material understanding that is vital for optimizing their optoelectronic properties. Here we use the 'Campanile' nano-optical probe to spectroscopically image exciton recombination within monolayer MoS2 with sub-wavelength resolution (60 nm), at the length scale relevant to many critical optoelectronic processes. Synthetic monolayer MoS2 is found to be composed of two distinct optoelectronic regions: an interior, locally ordered but mesoscopically heterogeneous two-dimensional quantum well and an unexpected similar to 300-nm wide, energetically disordered edge region. Further, grain boundaries are imaged with sufficient resolution to quantify local exciton-quenching phenomena, and complimentary nano-Auger microscopy reveals that the optically defective grain boundary and edge regions are sulfur deficient. The nanoscale structure-property relationships established here are critical for the interpretation of edge-and boundary-related phenomena and the development of next-generation two-dimensional optoelectronic devices.
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