4.5 Article

A Nanostructure-Based High-Temperature Selective Absorber-Emitter Pair for a Solar Thermophotovoltaic System with Narrowband Thermal Emission

Journal

PROGRESS IN ELECTROMAGNETICS RESEARCH-PIER
Volume 162, Issue -, Pages 95-108

Publisher

E M W PUBLISHING
DOI: 10.2528/PIER18011002

Keywords

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Funding

  1. National Natural Science Foundation of China [91233208, 61108022]
  2. Science and Technology Program of Guangzhou City of China [201607010312, 201707010444]
  3. Science and Technology Program of Guangdong Province of China [2017A010101023]
  4. National Natural Science Foundation of Guangdong Province of China [2016A030313446]
  5. National High Technology Research and Development Program (863 Program) of China [2012AA030402]
  6. Joint International Research Laboratory of Optical Information

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Using absorber-emitter modules, solar thermophotovoltaic (STPV) systems could potentially break through the Shockley-Queisser limit. Efficient spectral selectivity and high temperature endurance are the keys to this technology. In this paper, a high-efficiency selective absorber-emitter module based on refractory material nanostructures is designed for solar thermophotovoltaic applications. Our numerical simulations show that the proposed absorber-emitter module could provide a specified narrowband emission spectrum above the bandgap with optimal bandwidth, and its performance is robust and independent of incident angle and polarization. According to detailed balance calculations, over a broad range of module temperatures, the solar cell efficiency of our design could surpass the Shockley-Queisser limit by 41%.

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