Journal
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
Volume 115, Issue 36, Pages 8889-8894Publisher
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1806515115
Keywords
halide perovskite nanowire; heterostructure; phase transition; p-n junction; electrical transport
Categories
Funding
- US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division within the Physical Chemistry of Inorganic Nanostructures Program [DE-AC02-05CH11231, KC3103]
- Office of Science, Office of Basic Energy Science, of the US Department of Energy [DE-AC02-05CH11231]
- David and Lucile Packard Fellowship for Science and Engineering
- STROBE, a National Science Foundation Science and Technology Center [DMR 1548924]
- Office of Science of the US Department of Energy
- Suzhou Industrial Park
- NSF Graduate Research Fellowship [DGE 1106400]
- Lam Research Fellowship
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Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p-and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI3 nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.
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