Journal
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
Volume 109, Issue 27, Pages 10802-10805Publisher
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1205978109
Keywords
topological states; anomalous hall; spontaneous quantum Hall states; electron-electron interactions; layer antiferromagnets
Categories
Funding
- National Science Foundation CAREER [DMR/0748910, NSF/1106358, NSF/0926056]
- ONR [N00014-09-1-0724]
- Focus Center for Functional Engineered Nano Architectonics
- Defense Advanced Research Projects Agency/Defense Micro Electronics Activity [H94003-10-2-1003]
- National High Magnetic Field Laboratory [UCGP 5068]
- Welch Foundation [TBF 1473]
- Department of Energy [DE-FG03-02ER45958]
- State of Florida
- [NSF/DMR-0654118]
- Direct For Mathematical & Physical Scien [0748910] Funding Source: National Science Foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1106358] Funding Source: National Science Foundation
- Directorate For Engineering [0926056] Funding Source: National Science Foundation
- Division Of Materials Research [0748910] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys [0926056] Funding Source: National Science Foundation
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At the charge neutrality point, bilayer graphene (BLG) is strongly susceptible to electronic interactions and is expected to undergo a phase transition to a state with spontaneously broken symmetries. By systematically investigating a large number of single- and double-gated BLG devices, we observe a bimodal distribution of minimum conductivities at the charge neutrality point. Although sigma(min) is often approximately 2-3 e(2)/h (where e is the electron charge and h is Planck's constant), it is several orders of magnitude smaller in BLG devices that have both high mobility and low extrinsic doping. The insulating state in the latter samples appears below a transition temperature T-c of approximately 5 K and has a T = 0 energy gap of approximately 3 meV. Transitions between these different states can be tuned by adjusting disorder or carrier density.
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