4.8 Article

Evidence for a spontaneous gapped state in ultraclean bilayer graphene

Publisher

NATL ACAD SCIENCES
DOI: 10.1073/pnas.1205978109

Keywords

topological states; anomalous hall; spontaneous quantum Hall states; electron-electron interactions; layer antiferromagnets

Funding

  1. National Science Foundation CAREER [DMR/0748910, NSF/1106358, NSF/0926056]
  2. ONR [N00014-09-1-0724]
  3. Focus Center for Functional Engineered Nano Architectonics
  4. Defense Advanced Research Projects Agency/Defense Micro Electronics Activity [H94003-10-2-1003]
  5. National High Magnetic Field Laboratory [UCGP 5068]
  6. Welch Foundation [TBF 1473]
  7. Department of Energy [DE-FG03-02ER45958]
  8. State of Florida
  9. [NSF/DMR-0654118]
  10. Direct For Mathematical & Physical Scien [0748910] Funding Source: National Science Foundation
  11. Direct For Mathematical & Physical Scien
  12. Division Of Materials Research [1106358] Funding Source: National Science Foundation
  13. Directorate For Engineering [0926056] Funding Source: National Science Foundation
  14. Division Of Materials Research [0748910] Funding Source: National Science Foundation
  15. Div Of Electrical, Commun & Cyber Sys [0926056] Funding Source: National Science Foundation

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At the charge neutrality point, bilayer graphene (BLG) is strongly susceptible to electronic interactions and is expected to undergo a phase transition to a state with spontaneously broken symmetries. By systematically investigating a large number of single- and double-gated BLG devices, we observe a bimodal distribution of minimum conductivities at the charge neutrality point. Although sigma(min) is often approximately 2-3 e(2)/h (where e is the electron charge and h is Planck's constant), it is several orders of magnitude smaller in BLG devices that have both high mobility and low extrinsic doping. The insulating state in the latter samples appears below a transition temperature T-c of approximately 5 K and has a T = 0 energy gap of approximately 3 meV. Transitions between these different states can be tuned by adjusting disorder or carrier density.

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