Journal
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
Volume 108, Issue 32, Pages 13002-13006Publisher
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1018388108
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Funding
- MEXT (Ministry of Education, Culture, Sports, Science, Technology)
- JST (Japan Science and Technology Agency)
- MaNEP (Materials with Novel Electronic Properties)
- Swiss National Science Foundation [200021_121569]
- Swiss National Science Foundation (SNF) [200021_121569] Funding Source: Swiss National Science Foundation (SNF)
- Grants-in-Aid for Scientific Research [23656011, 21224009] Funding Source: KAKEN
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We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 10(14) cm(-2). Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.
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