An improved model considering elastic-plastic contact and partial hydrodynamic lubrication for chemical mechanical polishing

Chemical mechanical polishing (CMP) has become a primary technique for planarization of semiconductor wafers in sub-micro device fabrication. A physical CMP model combines the effects of grain flow hydrodynamic lubrication, pad roughness, and asperity contact between wafer and pad. In this study, an improved CMP model, considering both the grain flow with roughness effects and the micro-contact mechanism, is proposed. The model applies the average lubrication equation with partial hydrodynamic lubrication theory and considers the elastic-plastic micro-contact theory. The applied load acting on the wafer is balanced by the slurry pressure in the non-contact area, and the surface asperity contact force in the contact area. The effects of the CMP parameters including applied load, rotation speed, particle size, and pad roughness are studied and discussed. The simulation results compare well with experimental data in the literature and contribute to further understanding in wafer-pad contact mechanism.