Journal
PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART B-JOURNAL OF ENGINEERING MANUFACTURE
Volume 223, Issue 2, Pages 145-154Publisher
PROFESSIONAL ENGINEERING PUBLISHING LTD
DOI: 10.1243/09544054JEM1210
Keywords
near-field photolithography; line segment fabrication; power density; full width at half maximum
Funding
- National Science Council, Taiwan, R.O.C. [NSC 93-2120-M-194-006]
- Mechanical Institute Research Laboratories, Industrial Technology Research Institute
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This paper proposes an integral formula for the exposure energy density during the movement of a workpiece to enable the exposure energy distribution on a photoresist surface to be investigated. The photoresist is divided into finite nodes and the relative concentration variation of the photoactive compound at each finite node of photoresist interior layer is calculated. Also, the average full-width-at-half-maximum (FWHM) during near-field photolithography is calculated. The average FWHM of a line segment fabricated experimently using near-field photolithography is 215.7 nm at a depth of 10.3 nm.
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