Line segment fabrication model analysis of near-field photolithography

This paper proposes an integral formula for the exposure energy density during the movement of a workpiece to enable the exposure energy distribution on a photoresist surface to be investigated. The photoresist is divided into finite nodes and the relative concentration variation of the photoactive compound at each finite node of photoresist interior layer is calculated. Also, the average full-width-at-half-maximum (FWHM) during near-field photolithography is calculated. The average FWHM of a line segment fabricated experimently using near-field photolithography is 215.7 nm at a depth of 10.3 nm.