4.7 Article

Mid-Infrared (Mid-IR) Silicon-Based Photonics

Journal

PROCEEDINGS OF THE IEEE
Volume 106, Issue 12, Pages 2302-2312

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2018.2844565

Keywords

Emitters; germanium; MIR silicon photonics; modulators; optoelectronics; photonic integration

Funding

  1. European Community's H2020 under MIRPHAB Project
  2. European Community's H2020 under ICSPEC Project

Ask authors/readers for more resources

In less than a decade, the mid-infrared (mid-IR) spectral range (2.5-12 mu m) has become a key application for innovative silicon photonic devices because of the growing potential in spectroscopy, materials processing, chemical and biomolecular sensing, security and industry applications. We review the latest developments of emitters (GeSn lasers or heterogeneous quantum cascade laser on Si), passive devices (Silicon on Insulator, suspended Si or Ge waveguides, and SiGe/Si waveguides, Ge/SiGe waveguides), highly efficient nonlinear devices as well as integrated detectors for mid-IR applications. Perspectives for potential applications will also be discussed.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available