Journal
PROCEEDINGS OF THE IEEE
Volume 101, Issue 7, Pages 1585-1602Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2013.2253435
Keywords
Graphene; semiconductors; transistor; tunneling
Categories
Funding
- National Science Foundation [0802125]
- Semiconductor Research Corporation (SRC) through the Nanoelectronics Research Initiative (NRI) program at the Midwest Institute of Nanoelectronics Descovery (MIND) center
- U.S. Air Force Office of Scientific Research (AFOSR)
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1232191] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0802125] Funding Source: National Science Foundation
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As conventional transistors become smaller and thinner in the quest for higher performance, a number of hurdles are encountered. The discovery of electronic-grade 2-D crystals has added a new layer'' to the list of conventional semiconductors used for transistors. This paper discusses the properties of 2-D crystals by comparing them with their 3-D counterparts. Their suitability for electronic devices is discussed. In particular, the use of graphene and other 2-D crystals for interband tunneling transistors is discussed for low-power logic applications. Since tunneling phenomenon in reduced dimensions is not conventionally covered in texts, the physics is developed explicitly before applying it to transistors. Though we are in an early stage of learning to design devices with 2-D crystals, they have already been the motivation behind a list of truly novel ideas. This paper reviews a number of such ideas.
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