4.7 Article

Large-Area 2-D Electronics: Materials, Technology, and Devices

Journal

PROCEEDINGS OF THE IEEE
Volume 101, Issue 7, Pages 1638-1652

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2013.2251311

Keywords

Boron nitride (BN); circuits; graphene; molybdenum disulfide (MoS2); transistors

Funding

  1. Army Research Laboratory
  2. MIT-ARMY Institute for Soldier Nanotechnologies
  3. Young Investigator Program
  4. GATE MURI program of the U.S. Office of Naval Research

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Recent experiments since the discovery of monolayer graphite or graphene have led to an exciting revival in the interest in the electronic applications for graphene, as well as other 2-D materials such as hexagonal boron nitride (hBN) and molybdenum disulfide (MoS2). These layered materials serve as an exciting new platform for flexible and transparent electronics where surfaces can be enriched with new functionality. This paper aims to provide an overview behind these new class of materials ranging upon important issues for electronic integration including synthesis all the way to current state-of-the-art circuits and devices made from these materials.

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