Journal
PROCEEDINGS OF THE IEEE
Volume 101, Issue 7, Pages 1638-1652Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2013.2251311
Keywords
Boron nitride (BN); circuits; graphene; molybdenum disulfide (MoS2); transistors
Categories
Funding
- Army Research Laboratory
- MIT-ARMY Institute for Soldier Nanotechnologies
- Young Investigator Program
- GATE MURI program of the U.S. Office of Naval Research
Ask authors/readers for more resources
Recent experiments since the discovery of monolayer graphite or graphene have led to an exciting revival in the interest in the electronic applications for graphene, as well as other 2-D materials such as hexagonal boron nitride (hBN) and molybdenum disulfide (MoS2). These layered materials serve as an exciting new platform for flexible and transparent electronics where surfaces can be enriched with new functionality. This paper aims to provide an overview behind these new class of materials ranging upon important issues for electronic integration including synthesis all the way to current state-of-the-art circuits and devices made from these materials.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available