Journal
PROCEEDINGS OF THE IEEE
Volume 100, Issue 6, Pages 1920-1927Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2012.2190814
Keywords
Fourth element; Hodgkin-Huxley axon circuit model; memristor; pinched hystersis loops; alpha-beta circuit elements
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Funding
- AFOSR [FA 9550-10-1-0290]
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This tutorial clarifies the axiomatic definition of (nu((alpha)), i((beta))) circuit elements via a lookup table dubbed an A-pad, of admissible (nu, i) signals measured via Gedanken probing circuits. The (nu((alpha)), i((beta))) elements are ordered via a complexity metric. Under this metric, the memristor emerges naturally as the fourth element, characterized by a state-dependent Ohm's law. A logical generalization to memristive devices reveals a common fingerprint consisting of a dense continuum of pinched hysteresis loops whose area decreases with the frequency omega and tends to a straight line as omega -> infinity, for all bipolar periodic signals and for all initial conditions. This common fingerprint suggests that the term memristor be used henceforth as a moniker for memristive devices.
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