Journal
PROCEEDINGS OF THE IEEE
Volume 98, Issue 12, Pages 2095-2110Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2010.2070470
Keywords
Subthreshold swing; tunneling; tunneling transistor
Categories
Funding
- Nanoelectronics Research Initiative through the Midwest Institute for Nanoelectronics Discovery (MIND)
- National Institute of Standards and Technology (NIST)
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Steep subthreshold swing transistors based on interband tunneling are examined toward extending the performance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges. The promise of the TFET is in its ability to provide higher drive current than the MOSFET as supply voltages approach 0.1 V.
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