Journal
PROCEEDINGS OF THE IEEE
Volume 98, Issue 7, Pages 1234-1248Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2009.2035465
Keywords
III-nitrides; intersubband transitions; optical rectification; quantum cascade detectors; quantum wells
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Funding
- Swiss National Science Foundation
- ArmaSuisse
- Exchange Visitor Program
- U.S. Office of Naval Research
- National Center of Competence in Research
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We report on the physics, epitaxial growth, fabrication, and characterization of optoelectronic devices based on intersubband transitions in the AlN/GaN material system. While in 1999, only results of optical absorption experiments could be shown, photodetectors and modulators with operation frequencies beyond 10 GHz as well as optically pumped light emitters have been demonstrated recently. This is the reason for a comprehensive report on the most important properties of such devices. Beside some basic theoretical considerations, we will concentrate on the fabrication and characterization of modulators, switches, photodetectors, and light emitters. At the end of this paper, an outlook to future trends and developments in this emerging field will be given.
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