Journal
PROCEEDINGS OF THE IEEE
Volume 97, Issue 10, Pages 1717-1724Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2009.2021077
Keywords
Capacitance; dynamic response; hysteresis; inductance; memory; resistance
Categories
Funding
- National Science Foundation [DMR-0802830]
- Office of Naval Research [N000 14-09-1-0411]
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We extend the notion of memristive systems to capacitive and inductive elements, namely, capacitors and inductors whose properties depend on the state and history of the system. All these elements typically show pinched hysteretic loops in the two constitutive variables that define them: current-voltage for the memristor, charge-voltage for the memcapacitor, and current-flux for the meminductor. We argue that these devices are common at the nanoscale, where the dynamical properties of electrons and ions are likely to depend on the history of the system, at least within certain time scales. These elements and their combination in circuits open up new functionalities in electronics and are likely to find applications in neuromorphic devices to simulate learning, adaptive, and spontaneous behavior.
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