Journal
PROCEEDINGS OF THE IEEE
Volume 97, Issue 6, Pages 1056-1066Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2009.2017108
Keywords
Focal plane array; GaSb; InAS; infrared; two-color; Type-II
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In recent years, Type-II InAs/GaSb superlattice photodetectors have experienced significant improvements in material quality, structural designs, and imaging applications. They now appear to be a possible alternative to the state-of-the-art HgCdTe (MCT) technology in the long (LWIR) and very long wavelength infrared regimes. At the Center for Quantum Devices, we have successfully realized very high quantum efficiency, very high dynamic differential resistance R(o)A-product LWIR Type-II InAs/GaSb superlattice photodiodes with efficient surface passivation techniques. The demonstration of high-quality LWIR focal plane arrays that were 100% fabricated in-house reaffirms the pioneer position of this university-based laboratory.
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