4.7 Article

Photonic Properties of Er-Doped Crystalline Silicon

Journal

PROCEEDINGS OF THE IEEE
Volume 97, Issue 7, Pages 1269-1283

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2009.2018220

Keywords

Erbium; excitation; luminescence; nanolayers; optical gain; photonic; radiative recombination; rare earth; silicon; terahertz; two-color spectroscopy

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During the last four decades, a remarkable research effort has been made to understand the physical properties of Si:Er material, as it is considered to be a promising approach towards improving the optical properties of crystalline Si. in this paper, we present a summary of the most important results of that research. in the second part, we give a more detailed description of the properties of Si/Si:Er multinanolayer structures, which in many aspects represent the most advanced form of Er-doped crystalline Si with prospects for applications in Si photonics.

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