Journal
POLYMER
Volume 55, Issue 16, Pages 3599-3604Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.polymer.2014.06.008
Keywords
Photoacid generator; PAG bound polymer; Electron beam lithography
Categories
Funding
- Basic Science Research Program - Ministry of Education [2012R1A6A1029029]
- Technology Innovation Program - Ministry of Knowledge and Economy [10036982]
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A new photoacid generator (PAG) bound polymer containing triphenylsulfonium salt methacrylate (TPSMA) was synthesized and characterized. The PAG bound polymer was employed to improve electron beam lithographic performance, including sensitivity and resolution. The PAG bound polymer resist exhibited a higher sensitivity (120 mu C/cm(2)) than the PAG blend polymer resist (300 mu C/cm(2)). Eliminating the post exposure baking process during development improved the resolution due to decreased acid diffusion. A high-resolution pattern fabricated by electron beam lithography had a line width of 15 nm and a high aspect ratio. The newly developed patterns functioned well as masks for transferring patterns on Si substrates by reactive ion etching. (C) 2014 Elsevier Ltd. All rights reserved.
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